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| AOL1426 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1426 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product AOL1426 is Pb-free (meets ROHS & Sony 259 specifications). AOL1426L is a Green Product ordering option. AOL1426 and AOL1426L are electrically identical. Features VDS (V) = 30V ID = 46A (VGS = 10V) RDS(ON) <10.5m (VGS = 10V) RDS(ON) < 12.5m (VGS = 4.5V) Ultra SO-8TM Top View D Fits SOIC8 footprint ! G D S Bottom tab connected to drain G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Continuous Drain Current H Avalanche Current C Repetitive avalanche energy L=0.3mH TC=25C Power Dissipation B Power Dissipation A C Maximum 30 12 46 33 120 10 8 35 184 43 21 2.0 1 -55 to 175 Units V V A TC=25C TC=100C TA=25C TA=70C IDSM IAR EAR PD PDSM TJ, TSTG ID IDM A A mJ W W C TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case Symbol t 10s Steady-State Steady-State RJA RJC Typ 24 53 2.4 Max 30 64 3.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOL1426 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1 120 8.5 14.5 10.2 40 0.73 1.0 46 1210 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 330 85 1.2 22 VGS=10V, VDS=15V, ID=20A 10 3.7 2.7 10 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=100A/s 6.3 21 2.8 36 47 45 1.6 28 1452 10.5 18 12.5 1.55 Min 30 1 5 0.1 2.5 Typ Max Units V uA A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s A: The value of RJA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The RJA is the sum of the thermal impedence from junction to case R and case to ambient. JC E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assumin a maximum junction temperature of TJ(MAX)=175C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. Rev0: Mar 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOL1424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 6V 10V 4.5V ID (A) 60 ID(A) VGS=3.5V 30 25 20 15 10 30 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 13 Normalized On-Resistance 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 5 10 15 20 25 30 0 30 60 90 120 150 180 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 20 1.0E+02 1.0E+01 ID=20A RDS(ON) (m) 15 125C 10 25C 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage IS (A) 125C 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 25C Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID=20A VGS=4.5 VGS=10V 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 125 25C VDS=5V 90 11 RDS(ON) (m) VGS=4.5V 9 VGS=10V 7 5 Alpha & Omega Semiconductor, Ltd. AOL1426 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=20A Capacitance (pF) 2000 1500 Ciss 1000 500 Crss 0 0 5 Coss 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01 TJ(Max)=175C TC=25C RDS(ON) limited 10s 100 1m 10ms 0.1 Power (W) 140 120 100 80 60 40 20 0.001 TJ(Max)=175C TC=25C DC 0.1 1 VDS (Volts) 10 100 0.01 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJc .RJc RJC=3.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 PD Ton T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOL1426 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 ID(A), Peak Avalanche Current TA=25C Power Dissipation (W) 40 30 20 10 0 0.0001 0.001 0.01 0 25 50 75 100 125 150 175 T CASE (C) Figure 13: Power De-rating (Note B) 50 40 20 0 0.00001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 60 140 120 Current rating ID(A) 40 Power (W) 0 25 50 75 100 125 150 175 100 80 60 40 20 20 0 T CASE (C) Figure 14: Current De-rating (Note B) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=64C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Ton T 100 1000 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. |
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